Chemical vapor deposition (CVD) total solution. CVD precursors & Organometallics
About us        Business         Products         Japanese Site        Contact
HOME           PRODUCT
このサイト内すべてのデータ・文章の無断転載を堅く禁じます。 Copyright © 2010 Gas-Phase Growth
2012 (c) Gas-Phase Growth Ltd. All Rights Reserved.           Unauthorized reproduction of all data and text in this site is strictly prohibited.
GPG_Lucida1.png
BUSINESS INFORMATION














Technology in retention

The precurser for chemical vapor deposition
   New precurser search
   Synthesis and analysis of organometallic compound
   Vapor pressure measurement of organometallic compound
   Inactivation (stabilization) of organometallic compound

Analysis of deposition mechanism
   Pyrolysis experiment, mixing experiment of precurser compound
   Shape, pressure and flow rate variation of the reaction chamber
   Deposition to various substrates
Deposition with chemical vapor deposition equipment
   Al, Cu, Ni, NiSi, NiPt, Pt metal film, barrier metal film
  Al2O3, HfO2, HfSiO2, oxide film, nitride film, carbide film
   Raising or lowering deposition temperature
   Amorphization of the film

Design/production of chemical vapor deposition equipment
   Atmospheric pressure, low pressure, hot wall, cold wall
   Filament (cat.), small chemical vapor deposition equipment
   Transportation method of low vapor pressure precurser
Gas-Phase Growth Ltd.
#104 URAC, Tokyo Univ. of Agriculture and Technology, 2-24-16 Naka, Koganei, Tokyo 184-0012 Japan
                                                                     Please Send inquiry to:machida@kisoh-seicho.com
jigyonaiyo_E.jpg